features ?high output power: p 1db = 39.0dbm (typ.) ?high gain: g 1db = 7.0db (typ.) ?high pae: add = 29% (typ.) ?low im 3 = -46dbc@po = 28.5dbm ?broad band: 10.7 ~ 11.7ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed 1 edition 1.3 august 2004 FLM1011-8F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3400 5200 -0.5 -1.5 -3.0 38.5 39.0 - 6.0 7.0 - v ds = 5v, i ds = 170ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -170 a v ds = 10v f = 10.7 ~ 11.7 ghz i ds ? 0.65 i dss (typ.) z s = z l = 50 ? ma v - 3400 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr power-added efficiency -29- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 3.0 3.5 c/w case style: ib r th 3rd order intermodulation distortion f = 11.7ghz, ? f = 10mhz 2-tone test pout = 28.5dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise - - 80 c ? t ch description the FLM1011-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM1011-8F x, ku-band internally matched fet power derating curve 30 50 40 20 10 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 11.7 ghz f2 = 11.71 ghz 2-tone test 16 20 18 22 24 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -40 -30 -20 -50 27 25 23 29 31 33 im 3 (dbc) p out im 3 output power vs. frequency pin=33dbm 31dbm 29dbm 27dbm 10.7 11.45 11.2 10.95 11.7 frequency (ghz) 36 37 38 39 40 35 output power (dbm) v ds =10v p 1db output power vs. input power 29 31 33 35 37 39 23 25 27 29 31 33 30 15 input power (dbm) output power (dbm) add p out add (%) v ds =10v f = 11.2 ghz
3 FLM1011-8F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 50 ? 10 1 2 3 4 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 10.7 10.9 10.9 11.1 11.1 11.5 11.5 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 11.1 11.1 11.5 11.5 10.9 10.7 10.9 s-parameters v ds = 10v, i ds = 2200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 10500 .638 13.3 2.349 110.3 .066 93.2 .386 -83.3 10600 .630 5.4 2.376 100.3 .071 83.2 .358 -93.7 10700 .617 -2.6 2.410 89.8 .074 73.3 .326 -106.9 10800 .597 -10.6 2.446 78.9 .076 63.9 .299 -122.1 10900 .570 -18.9 2.476 68.3 .081 53.1 .283 -140.5 11000 .539 -27.5 2.513 57.0 .082 43.1 .282 -161.2 11100 .498 -36.2 2.544 45.3 .083 32.6 .297 179.1 11200 .449 -45.8 2.563 33.5 .087 22.7 .324 161.1 11300 .397 -55.9 2.565 21.5 .088 12.3 .356 146.0 11400 .337 -67.2 2.561 9.2 .090 0.3 .386 133.2 11500 .276 -80.6 2.548 -2.8 .090 -10.3 .411 122.1 11600 .217 -97.8 2.528 -14.9 .089 -21.7 .425 112.3 11700 .167 -124.5 2.519 -27.2 .093 -32.9 .429 103.1 11800 .143 -162.8 2.509 -39.7 .090 -44.9 .419 94.1 11900 .168 157.8 2.502 -52.6 .093 -57.6 .399 84.4
4 FLM1011-8F x, ku-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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